CS ADSORPTION ON THE SI(100)2X1 SURFACES

被引：66

作者：

HASHIZUME, T

SUMITA, I

MURATA, Y

HYODO, S

SAKURAI, T

机构：

[1] MATSUSHITA RES INST TOKYO,KAWASAKI 222,JAPAN

[2] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN

[3] MEIJI UNIV,KAWASAKI,KANAGAWA 222,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.585545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cs adsorption on the Si(100)2 X 1 surface was investigated by the field ion-scanning tunneling microscope. It was found that Cs atoms occupy the off-centered valley bridge site at the initial coverage. The result, together with Li/K adsorption, can be understood well based on the strong interaction between the directional dangling bonds and active alkali metal atoms.

引用

页码：742 / 744

页数：3

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