REACTIVE ION ETCHING OF THROUGH-THE-WAFER VIA CONNECTIONS FOR CONTACTS TO GAAS-FETS

被引：9

作者：

COOPER, CB

DAY, ME

YUEN, C

SALIMIAN, M

机构：

来源：

关键词：

D O I：

10.1149/1.2100237

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2533 / 2535

页数：3

共 6 条

[1]

DASARO LA, 1981, AM I PHYSICS C SERIE, V56, P267

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FLAMM, DL ;

IBBOTSON, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :626-628

[3]

GEISSBERGER AE, 1984, DEC AM VAC SOC S REN

[4] DRY ETCHING OF THROUGH SUBSTRATE VIA HOLES FOR GAAS MMICS [J].

HIPWOOD, LG ;

WOOD, PN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :395-397

IBBOTSON, DE ;

FLAMM, DL ;

DONNELLY, VM .

LI, JZ ;

ADESIDA, I ;

WOLF, ED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :406-409