GREEN-EMITTING DIODES IN VAPOR-PHASE EPITAXIAL GAP

被引：28

作者：

STRINGFELLOW, GB ^{[1
]}

KERPS, D ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,1501 PAGE MILL RD,PALO ALTO,CA 94304

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 11期

关键词：

D O I：

10.1016/0038-1101(75)90121-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1019 / 1028

页数：10

共 32 条

[1] LIGHT-EMITTING DIODES
BERGH, AA
DEAN, PJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 156 - +
[2] SUBMILLIMETER CYCLOTRON-RESONANCE MEASUREMENT OF EFFECTIVE MASSES OF HOLES IN PARA TYPE GAP
BRADLEY, CC
SIMMONDS, PE
STOCKTON, JR
STRADLING, RA
[J]. SOLID STATE COMMUNICATIONS, 1973, 12 (05) : 413 - 416
[3] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE
CASEY, HC
PANISH, MB
CHANG, LL
[J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +
[4] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP
CASEY, HC
ERMANIS, F
WOLFSTIRN, KB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +
[5] ZINC DIFFUSED GAP RED ELECTROLUMINESCENT DIODES WITH 1.5 PER CENT EXTERNAL QUANTUM EFFICIENCY
CASEY, HC
LUTHER, LC
LORIMOR, OG
JORDAN, AS
KOWALCHIK, M
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (06) : 617 - +
[6] DIFFUSION + SOLUBILITY OF ZINC IN GALLIUM PHOSPHIDE SINGLE CRYSTALS
CHANG, LL
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 374 - &
[7] Craford M. G., 1973, Journal of Electronic Materials, V2, P137, DOI 10.1007/BF02658108
[8] MINORITY-CARRIER LIFETIMES AND LUMINESCENCE EFFICIENCIES IN NITROGEN-DOPED GAP
DAPKUS, PD
HACKETT, WH
LORIMOR, OG
KAMMLOTT, GW
HASZKO, SE
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 227 - 229
[9] ELECTROLUMINESCENT RECOMBINATION NEAR THE ENERGY GAP IN GAP DIODES
GERSHENZON, M
MIKULYAK, RM
LOGAN, RA
FOY, PW
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 113 - 124
[10] GREEN AND YELLOW EMITTING DEVICES IN VAPOR-GROWN GALLIUM-PHOSPHIDE
HART, PB
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 880 - 884

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