ZINC DIFFUSED GAP RED ELECTROLUMINESCENT DIODES WITH 1.5 PER CENT EXTERNAL QUANTUM EFFICIENCY

被引：6

作者：

CASEY, HC

LUTHER, LC

LORIMOR, OG

JORDAN, AS

KOWALCHIK, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 06期

关键词：

D O I：

10.1016/0038-1101(72)90004-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：617 / +

页数：1

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[3] CASEY HC, ATOMIC DIFFUSION SEM
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[6] GERHENZON M, 1966, PHYS REV, V149, P580
[7] ROLE OF OXYGEN IN (ZN, O) DOPED GAP
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[8] OUTPUT CHARACTERISTICS OF GALLIUM PHOSPHIDE, ZN-O DOPED ELECTROLUMINESCENT DIODES
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1969, 2 (08) : 1180 - &
[9] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES
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[J]. APPLIED PHYSICS LETTERS, 1970, 16 (12) : 477 - &
[10] NEW RED PAIR LUMINESCENCE FROM GAP
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