ELECTRONIC-PROPERTIES OF MULTIPLE SI DELTA DOPING IN GAAS

被引：55

作者：

DEGANI, MH ^{[1
]}

机构：

[1] UNIV SAO PAULO, INST FIS & QUIM SAO CARLOS, DEPT FIS & CIENCIA MAT, BR-13560 SAO CARLOS, SP, BRAZIL

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 08期

关键词：

D O I：

10.1063/1.349117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The subband structure of multiple Si delta-doped layers in GaAs is calculated within the local-density-functional approximation for several doping periods. The diffusion effect of donors impurities are investigated. The physical properties of the present multiple delta-doping depend strongly on the period length, reflecting a transition from quantum well to superlattice.

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页码：4362 / 4365

页数：4

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