RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS

被引:57
作者
MACIEL, AC [1 ]
TATHAM, M [1 ]
RYAN, JF [1 ]
WORLOCK, JM [1 ]
NAHORY, RE [1 ]
HARBISON, JP [1 ]
FLOREZ, LT [1 ]
机构
[1] BELL COMMUN RES INC,RED BANK,NJ 07701
关键词
D O I
10.1016/0039-6028(90)90303-P
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report photoluminescence and Raman scattering measurements of periodically δ-doped Si : GaAs. The spectra of short-period structures are similar to those of uniformly doped material, but new lines appear in the Raman spectra of longer-period structures that arise from inter-subband transitions between confined electron levels in a single δ-layer or between minibands in the δ-doping superlattice. © 1990.
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页码:251 / 254
页数:4
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