SUBBANDS IN SPACE-CHARGE LAYERS ON NARROW GAP SEMICONDUCTORS - VALIDITY OF SEMICLASSICAL APPROXIMATION

[1] ANDO T, 1985, J PHYS SOC JPN, V53, P1528

[2] SELF-CONSISTENT CALCULATIONS OF ELECTRIC SUBBANDS IN P-TYPE SILICON INVERSION LAYERS [J]. SURFACE SCIENCE, 1976, 58 (01) : 138 - 140

[3] BAND MIXING IN NARROW GAP SEMICONDUCTORS [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1984, 54 (03): : 191 - 194

[4] MAGNETOTRANSPORT IN AN INVERSION LAYER ON P-INSB [J]. SURFACE SCIENCE, 1978, 73 (01) : 549 - 552

[5] DARR A, 1975, SOLID STATE COMMUN, V17, P455

[6] DARR A, 1976, 13TH P INT C PHYS SE, P774

[7] COMMENTS ON HOLE MASS IN SILICON INVERSION LAYERS [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (11) : 1031 - 1035

[8] THEORY OF SPACE-CHARGE LAYERS IN NARROW-GAP SEMICONDUCTORS [J]. SURFACE SCIENCE, 1982, 113 (1-3) : 131 - 136

[9] Ohkawa F. J., 1975, Progress of Theoretical Physics Supplement, P164, DOI 10.1143/PTPS.57.164

[10] OHKAWA FJ, 1974, J PHYS SOC JPN, V37, P1325, DOI 10.1143/JPSJ.37.1325

[1] ANDO T, 1985, J PHYS SOC JPN, V53, P1528

[2] SELF-CONSISTENT CALCULATIONS OF ELECTRIC SUBBANDS IN P-TYPE SILICON INVERSION LAYERS [J]. SURFACE SCIENCE, 1976, 58 (01) : 138 - 140

[3] BAND MIXING IN NARROW GAP SEMICONDUCTORS [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1984, 54 (03): : 191 - 194

[4] MAGNETOTRANSPORT IN AN INVERSION LAYER ON P-INSB [J]. SURFACE SCIENCE, 1978, 73 (01) : 549 - 552

[5] DARR A, 1975, SOLID STATE COMMUN, V17, P455

[6] DARR A, 1976, 13TH P INT C PHYS SE, P774

[7] COMMENTS ON HOLE MASS IN SILICON INVERSION LAYERS [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (11) : 1031 - 1035

[8] THEORY OF SPACE-CHARGE LAYERS IN NARROW-GAP SEMICONDUCTORS [J]. SURFACE SCIENCE, 1982, 113 (1-3) : 131 - 136

[9] Ohkawa F. J., 1975, Progress of Theoretical Physics Supplement, P164, DOI 10.1143/PTPS.57.164

[10] OHKAWA FJ, 1974, J PHYS SOC JPN, V37, P1325, DOI 10.1143/JPSJ.37.1325