POLARIZATION SPECTROSCOPY OF MODULATED GAAS/GAALAS QUANTUM-WELLS GROWN ON VICINAL SURFACES - ANISOTROPIC ISLANDS OR ORDERED GROWTH

被引：18

作者：

BLOCH, J ^{[1
]}

BOCKELMANN, U ^{[1
]}

LARUELLE, F ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90239-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the anistropy of optical properties in quantum wells grown on vicinal surfaces and modulated by a fractional AlAs layer inserted in their middle. Photoluminescence linear polarization is systematically measured as a function of terrace length and of AlAs terrace coverage. Our results highlight the influence of anisotropic islands on optical properties.

引用

页码：529 / 533

页数：5

共 17 条

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