ELECTRONIC CHARACTERIZATION OF HETEROJUNCTIONS BY SURFACE-POTENTIAL MONITORING

被引：24

作者：

KRONIK, L

LEIBOVITCH, M

FEFER, E

KOROBOV, V

SHAPIRA, Y

机构：

[1] Department of Electrical Engineering-Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramal-Aviv

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 07期

关键词：

GAAS; IN2O3/INP; SURFACE PHOTOVOLTAGE; SURFACE POTENTIAL;

D O I：

10.1007/BF02653338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An original approach for studying the formation of semiconductor heterojunctions and their electronic properties is discussed and illustrated. Monitoring the changes in the surface potential during the heterojunction formation lends itself to direct measurement of the band discontinuities, Debye length, and the width of the space-charge region at heterojunction interfaces. The contribution of an interface dipole is considered. The technique is demonstrated by a technologically significant experimental example.

引用

页码：893 / 901

页数：9

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