A 50 GHZ BROAD-BAND MONOLITHIC GAAS/ALAS RESONANT-TUNNELING DIODE TRIGGER-CIRCUIT

被引:9
作者
YANG, L [1 ]
DRAVING, SD [1 ]
MARS, DE [1 ]
TAN, MRT [1 ]
机构
[1] HEWLETT PACKARD CORP,COLORADO SPRINGS,CO 80901
关键词
D O I
10.1109/4.284711
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the design, circuit simulation, fabrication and testing of a 50 GHz trigger circuit using GaAs/AlAs resonant tunneling diodes. A new trigger circuit was designed to eliminate the 180-degrees phase splitter used in a previous complementary input trigger circuit. Our monolithic approach, integrated GaAs/AlAs resonant tunneling diodes (in a back-to-back configuration) and a 50 OMEGA coplanar waveguide, minimized the parasitic circuit elements and internal reflections from the package thus achieving high frequency operation. The circuit was able to trigger on input sinusoidal waves of input powers of -3 dBm up to 50 GHz with time jitter of less than 1 ps rms over the entire measured frequency range from 5 to 50 GHz. The upper limit of 50 GHz was imposed by our measurement system.
引用
收藏
页码:585 / 595
页数:11
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