A NEW METHOD OF DETERMINATION OF THE IV CHARACTERISTICS OF NEGATIVE DIFFERENTIAL CONDUCTANCE DEVICES BY MICROWAVE REFLECTION COEFFICIENT MEASUREMENTS

被引：5

作者：

HUANG, P

PAN, DS

LUHMANN, NC

机构：

[1] Department of Electrical Engineering, University of California, Los Angeles

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 12期

关键词：

D O I：

10.1109/55.63051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique to map out ail of the I- V characteristics of negative differential conductance (NDC) devices is described. This method employs the dc measurable positive conductance portions of the I- V curve together with the measured microwave reflection coefficients at different RF signal levels and fixed dc bias voltage. The advantages of the method for high NDC devices are pointed out in a stability analysis. The complete I-V curve of a tunnel diode has been obtained with an accuracy within 5% in a proof-of-principal test of this method. © 1990 IEEE

引用

页码：570 / 572

页数：3

共 15 条

[1] RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES [J].