A NEW TRANSIT-TIME DEVICE USING QUANTUM-WELL INJECTION

被引：28

作者：

KESAN, VP ^{[1
]}

NEIKIRK, DP ^{[1
]}

STREETMAN, BG ^{[1
]}

BLAKEY, PA ^{[1
]}

机构：

[1] MICROELECTR & COMP TECHNOL CORP,VLSI CAD PROGRAM,AUSTIN,TX 78759

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 04期

关键词：

D O I：

10.1109/EDL.1987.26576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：129 / 131

页数：3

共 18 条

[1]

BLAKEY PA, 1985, ELECTRON LETT, V21, P28, DOI 10.1049/el:19850022

[2]

BLAKEY PA, 1981, VLSI ELECTRONICS MIC, V2, P105

[3]

BROWN ER, 1986, IEEE DEVICE RES C AM

[4]

COLEMAN DJ, 1971, IEEE DEVICE RES C AN

[5] BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J].

HESS, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :937-940

[6] FREQUENCY AND POWER LIMIT OF QUANTUM-WELL OSCILLATORS [J].

JOGAI, B ;

WANG, KL ;

BROWN, KW .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :1003-1005

[7]

KESAN VP, 1987, IN PRESS SPRINGER SE

[8]

KRAMER NB, 1984, MICROWAVES RF, V23, P243

[9]

Nishizawa J., 1982, INFRARED MILLIMETE 1, V5, P215

[10] GAAS TUNNETT DIODES [J].

NISHIZAWA, JI ;

OKUNO, Y ;

MOTOYA, K .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (12) :1029-1035

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