GAAS TUNNETT DIODES

被引：25

作者：

NISHIZAWA, JI ^{[1
]}

OKUNO, Y ^{[1
]}

MOTOYA, K ^{[1
]}

机构：

[1] SEMICONDUCTOR RES INST,KAWAUCHI,SENDAI 980,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1978年 / 26卷 / 12期

关键词：

D O I：

10.1109/TMTT.1978.1129540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1029 / 1035

页数：7

共 25 条

[1] DEPENDENCE OF PEAK CURRENT DENSITY ON ACCEPTOR CONCENTRATION IN GERMANIUM TUNNEL DIODES [J].

BUTCHER, PN ;

HULME, KF ;

MORGAN, JR .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :358-&

[2]

HADDAD G, COMMUNICATION

[3]

HIRACHI Y, 1976, TECH DIG, P102

[4]

INO M, 1972, OCT IECE JAP TECHN G, V49

[5]

ISHIBASHI T, COMMUNICATION

[6]

ISHIBASHI T, 1977, FEB IECE JAP TECHN G, V76, P137

[7] THEORY OF TUNNELING [J].

KANE, EO .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :83-+

[8]

Moll J. L., 1964, PHYSICS SEMICONDUCTO

[9]

NISHITANI K, 1975, AUG IECE JAP TECHN G, V75, P33

[10] NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J].

NISHIZAWA, J ;

OKUNO, Y ;

TADANO, H .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :215-222

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