AN AES EVALUATION OF CLEANING AND ETCHING METHODS FOR INSB

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] AURET FD, UNPUB

[3] AUGER ANALYSIS OF INSB IR DETECTOR ARRAYS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (02): : 718 - 722

[4] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[5] CHANG CC, 1974, CHARACTERIZATION SOL, pCH20

[6] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[7] FAUST FW, 1962, COMPOUND SEMICONDUCT, V1, pCH50

[8] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[9] EFFECT OF GAAS OR GAXAL1-XAS OXIDE COMPOSITION ON SCHOTTKY-BARRIER BEHAVIOR [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3376 - 3382

[10] COMMENT ON POLARITY EFFECTS IN INSB-ALLOYED P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2967 - &

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] AURET FD, UNPUB

[3] AUGER ANALYSIS OF INSB IR DETECTOR ARRAYS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (02): : 718 - 722

[4] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[5] CHANG CC, 1974, CHARACTERIZATION SOL, pCH20

[6] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[7] FAUST FW, 1962, COMPOUND SEMICONDUCT, V1, pCH50

[8] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[9] EFFECT OF GAAS OR GAXAL1-XAS OXIDE COMPOSITION ON SCHOTTKY-BARRIER BEHAVIOR [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3376 - 3382

[10] COMMENT ON POLARITY EFFECTS IN INSB-ALLOYED P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2967 - &