A COMPREHENSIVE ANALYTIC MODEL OF ACCUMULATION-MODE MOSFETS IN POLYSILICON THIN-FILMS

被引：13

作者：

AHMED, SS

KIM, DM

SHICHIJO, H

机构：

[1] OREGON GRAD CTR, DEPT APPL PHYS & ELECT ENGN, BEAVERTON, OR 97006 USA

[2] TEXAS INSTRUMENTS INC, CENT RES LABS, DALLAS, TX 75265 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 07期

关键词：

D O I：

10.1109/T-ED.1986.22603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：973 / 985

页数：13

共 19 条

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