SILICON STRIP FRONT-END USING A LOW-NOISE ANALOG CMOS PROCESS

被引：5

作者：

DABROWSKI, W

DEWITT, J

机构：

[1] Santa Cruz Institute for Particle Physics, University of California, Santa Cruz

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1993年 / 326卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(93)90336-G

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have designed and fabricated through MOSIS a 64-channel chip with fast front-end electronics for silicon strip detectors. The circuit consists of a preamplifier and a comparator and uses BJTs and JFETs fabricated in the modified CMOS process. The chip provides good noise and timing performance at power dissipation below 1.5 mW per channel.

引用

页码：82 / 84

页数：3