PROPERTIES OF METAL POLY(P-PHENYLENE) SCHOTTKY BARRIERS

被引：23

作者：

CAMPOS, M

BELLO, B

机构：

[1] Universidade de Sao Paulo, Sao Carlos

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1993年 / 26卷 / 08期

关键词：

D O I：

10.1088/0022-3727/26/8/018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-poly (p-phenylene) Schottky barriers, in which the metal and semiconductor are separated by a thin interfacial film, exhibit nearly ideal diode behaviour in the dark. The current-voltage characteristics have been studied in the range 20-300-degrees-C and the current transport properties in the barriers are found to be in agreement with the diffusion theory of metal-semiconductor rectification.

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页码：1274 / 1277

页数：4

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