VOLTAGE GENERATION ON CLEAVAGE OF SILICON

被引：10

作者：

LI, DG

HANEMAN, D

MCALPINE, NS

CHEN, B

机构：

[1] School of Physics, University of New South Wales, Sydney

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.73.1170

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Voltage pulses up to 0.39 V are generated on cleaving Si wafers in air or vacuum. Current pulses up to 5 mA are also generated between contacts on either side of the crack. The phenomena are explained in terms of dipole generation due to loss of centrosymmetric properties about a crack.

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页码：1170 / 1173

页数：4

相关论文

共 22 条

[1] DOMAIN-STRUCTURE OF THE SI(111)2X1 SURFACE STUDIED BY REFLECTION ELECTRON-MICROSCOPY [J].

BENNETT, PA ;

OU, H ;

ELIBOL, C ;

COWLEY, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1634-1635

[2] ENERGY OF SI AND GE CLUSTERS UNDER STRETCH AND SHEAR FOR CLEAVAGE [J].

CHEN, B ;

HANEMAN, D .

PHYSICAL REVIEW B, 1993, 48 (20) :15182-15188

[3]

CLARKE DR, 1992, SEMICONDUCT SEMIMET, V37, pCH2

[4] SLAB-MINDO CALCULATIONS ON THE SI(111)2X1 SURFACE [J].

CRAIG, BI ;

SMITH, PV .

SURFACE SCIENCE, 1990, 225 (03) :225-232

[5]

DICKINSON JT, 1987, ATOMIC MOL PROCESSIN, P39

[6] ATOMIC AND MOLECULAR-EMISSION ACCOMPANYING FRACTURE OF SINGLE-CRYSTAL GE - A DISLOCATION-DRIVEN PROCESS [J].

DICKINSON, T ;

JENSEN, LC ;

LANGFORD, SC .

PHYSICAL REVIEW LETTERS, 1991, 66 (16) :2120-2123

[7] SURFACES OF SILICON [J].

HANEMAN, D .

REPORTS ON PROGRESS IN PHYSICS, 1987, 50 (08) :1045-1086

[8] CLEAVAGE LUMINESCENCE FROM SILICON [J].

HANEMAN, D ;

MCALPINE, N .

PHYSICAL REVIEW LETTERS, 1991, 66 (06) :758-761

[9]

HANEMAN D, 1994, IN PRESS SPRINGER P

[10] THE INFLUENCE OF INTERNAL SURFACES ON THE (2 X-1) SHUFFLE AND GLIDE CLEAVAGE RECONSTRUCTIONS FOR SI(111) [J].

HUANG, YM ;

SPENCE, JCH ;

SANKEY, OF ;

ADAMS, GB .

SURFACE SCIENCE, 1991, 256 (03) :344-353