ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY OF HG1-XCDXTE

被引：20

作者：

SILBERMAN, JA ^{[1
]}

LASER, D ^{[1
]}

SHIH, CK ^{[1
]}

FRIEDMAN, DJ ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

WILSON, JA ^{[1
]}

机构：

[1] SANTA BARBARA RES CTR,GOLETA,CA 93017

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.573209

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：233 / 237

页数：5

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[21] ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF CDTE-FILMS GROWN ON CDTE (110) SUBSTRATES
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[26] DOMINANCE OF ATOMIC STATES IN A SOLID - SELECTIVE BREAKDOWN OF THE VIRTUAL CRYSTAL APPROXIMATION IN A SEMICONDUCTOR ALLOY, HG1-XCDXTE
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[27] BAND-GAP VARIATION AND LATTICE, SURFACE, AND INTERFACE INSTABILITIES IN HG1-XCDXTE AND RELATED-COMPOUNDS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1735 - 1743