ALGAAS/GAAS HBT WITH GALNAS CAP LAYER FABRICATED BY MULTIPLE-SELF-ALIGNMENT PROCESS USING ONE MASK

被引：9

作者：

OTA, Y

HIROSE, T

YANAGIHARA, M

RYOJI, A

KATO, T

INADA, M

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 09期

关键词：

D O I：

10.1049/el:19890415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：610 / 612

页数：3

共 4 条

[1] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J].

CHANG, MCF ;

ASBECK, PM ;

WANG, KC ;

SULLIVAN, GJ ;

SHENG, NH ;

HIGGINS, JA ;

MILLER, DL .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :303-305

[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SMALL SIZE FABRICATED BY A MULTIPLE SELF-ALIGNMENT PROCESS USING ONE MASK [J].

INADA, M ;

OTA, Y ;

NAKAGAWA, A ;

YANAGIHARA, M ;

HIROSE, T ;

EDA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2405-2411

[3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[4] PROPERTIES OF MOLECULAR-BEAM-EPITAXY-GROWN AND O+-IMPLANTED GAAS AND THEIR APPLICATION TO THE FORMATION OF A BURIED COLLECTOR OF AN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

OTA, Y ;

YANAGIHARA, M ;

INADA, M .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :926-930

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