PROPERTIES OF MOLECULAR-BEAM-EPITAXY-GROWN AND O+-IMPLANTED GAAS AND THEIR APPLICATION TO THE FORMATION OF A BURIED COLLECTOR OF AN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：16

作者：

OTA, Y

YANAGIHARA, M

INADA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：926 / 930

页数：5

共 14 条

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[7] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SMALL SIZE FABRICATED BY A MULTIPLE SELF-ALIGNMENT PROCESS USING ONE MASK [J].

INADA, M ;

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EDA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2405-2411

[8]

INADA M, 1986, 18TH C SOL STAT DEV, P769

[9] EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ITO, H ;

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