REDISTRIBUTION OF IMPLANTED OXYGEN IN GAAS

被引：10

作者：

FAVENNEC, PN ^{[1
]}

DEVEAUD, B ^{[1
]}

SALVI, M ^{[1
]}

MARTINEZ, A ^{[1
]}

ARMAND, C ^{[1
]}

机构：

[1] CNRS,LAAS,F-31400 TOULOUSE,FRANCE

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 05期

关键词：

D O I：

10.1049/el:19820139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：202 / 203

页数：2

共 8 条

[1]

Asbeck P. M., 1980, IEEE Electron Device Letters, VEDL-1, P35, DOI 10.1109/EDL.1980.25221

[2] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].

EVANS, CA ;

DELINE, VR ;

SIGMON, TW ;

LIDOW, A .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293

[3] CHROMIUM GETTERING IN GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN ;

GAUNEAU, M ;

LHARIDON, H ;

DEVEAUD, B ;

EVANS, CA ;

BLATTNER, RJ .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :271-273

[4] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2532-2536

[5] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS [J].

FAVENNEC, PN ;

HARIDON, HL .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :699-701

[6]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[7] ALLOYING OF AU LAYERS AND REDISTRIBUTION OF CR IN GAAS [J].

MAGEE, TJ ;

PENG, J ;

HONG, JD ;

DELINE, VR ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :615-617

[8] DAMAGE GETTERING OF CR DURING THE ANNEALING OF CR AND S IMPLANTS IN SEMI-INSULATING GAAS [J].

VASUDEV, PK ;

WILSON, RG ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :308-310

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