CHROMIUM GETTERING IN GAAS BY OXYGEN IMPLANTATION

被引：21

作者：

FAVENNEC, PN ^{[1
]}

GAUNEAU, M ^{[1
]}

LHARIDON, H ^{[1
]}

DEVEAUD, B ^{[1
]}

EVANS, CA ^{[1
]}

BLATTNER, RJ ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 04期

关键词：

D O I：

10.1063/1.92303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：271 / 273

页数：3

共 10 条

[1]

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[2]

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[4]

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[5] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION [J].

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CHEN, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :587-596

[6]

HUBER AM, 1979, APPL PHYS LETT, V34, P859

[7] LOW-TEMPERATURE REDISTRIBUTION OF CR IN BORON-IMPLANTED GAAS IN THE ABSENCE OF ENCAPSULANT STRESS [J].

MAGEE, TJ ;

LEE, KS ;

ORMOND, R ;

EVANS, CA ;

BLATTNER, RJ ;

HOPKINS, C .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :635-637

[8]

PICOLI G, 1980, SEMI INSULATING 3 5

[9] DEEP LEVELS IN BORON-IMPLANTED GAAS [J].

TOULOUSE, B ;

FAVENNEC, PN .

REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (04) :869-874

[10]

YODER MN, 1980, SEMI INSULATING 3 5

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