FINITE-ELEMENT APPROACH TO BAND-STRUCTURE ANALYSIS

被引:23
作者
HERMANSSON, B [1 ]
YEVICK, D [1 ]
机构
[1] UNIV LUND,DEPT THEORET PHYS,S-22362 LUND,SWEDEN
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 10期
关键词
D O I
10.1103/PhysRevB.33.7241
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7241 / 7242
页数:2
相关论文
共 5 条
[1]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[2]   DISAPPEARANCE OF IMPURITY LEVELS IN SILICON AND GERMANIUM DUE TO SCREENING [J].
LOWNEY, JR ;
KAHN, AH ;
BLUE, JL ;
WILSON, CL .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4075-4080
[3]   NEW FAST FOURIER-TRANSFORM AND FINITE-ELEMENT APPROACHES TO THE CALCULATION OF MULTIPLE-STRIPE-GEOMETRY LASER MODES [J].
YEVICK, D ;
HERMANSSON, B .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1769-1771
[4]   BAND-STRUCTURE CALCULATION WITH THE SPLIT-STEP FAST FOURIER-TRANSFORM TECHNIQUE [J].
YEVICK, D ;
HERMANSSON, B .
SOLID STATE COMMUNICATIONS, 1985, 54 (02) :197-199
[5]  
Zienkiewicz O.C., 1977, FINITE ELEMENT METHO