AN XPS STUDY OF SPUTTERED A-SI,GE ALLOYS

被引：21

作者：

LUCOVSKY, G ^{[1
]}

CHAO, SS ^{[1
]}

TYLER, JE ^{[1
]}

DEMAGGIO, G ^{[1
]}

机构：

[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 03期

关键词：

D O I：

10.1116/1.571833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：838 / 844

页数：7

共 29 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16

[2]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[4] REMOTE INDUCTIVE EFFECTS EVALUATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY (ESCA) [J].

CARVER, JC ;

GRAY, RC ;

HERCULES, DM .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1974, 96 (22) :6851-6856

[5] OPTICAL-PROPERTIES OF AMORPHOUS SIXGE1-X(H) ALLOYS PREPARED BY RFGLOW DISCHARGE [J].

CHEVALLIER, J ;

WIEDER, H ;

ONTON, A ;

GUARNIERI, CR .

SOLID STATE COMMUNICATIONS, 1977, 24 (12) :867-869

[6]

COTTON FA, 1972, ADV INORG CHEM, P113

[7] THE CHARACTERISTICS OF HIGH-CURRENT AMORPHOUS-SILICON DIODES [J].

GIBSON, RA ;

LECOMBER, PG ;

SPEAR, WE .

APPLIED PHYSICS, 1980, 21 (04) :307-311

[8] ESCA STUDY OF ORGANOSILICON COMPOUNDS [J].

GRAY, RC ;

CARVER, JC ;

HERCULES, DM .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (05) :343-357

[9] PHOTOELECTRON-SPECTRA OF FLUORINATED AMORPHOUS-SILICON (A-SI-F) [J].

GRUNTZ, KJ ;

LEY, L ;

JOHNSON, RL .

PHYSICAL REVIEW B, 1981, 24 (04) :2069-2080

[10]

HUHEEY JE, 1978, INORG CHEM, P848

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