CONDUCTANCE AND CAPACITANCE STUDIES IN GAP SCHOTTKY BARRIERS

被引:159
作者
VINCENT, G [1 ]
BOIS, D [1 ]
PINARD, P [1 ]
机构
[1] INST NATL SCI APPL,LAB PHYS MAT,LYON,FRANCE
关键词
D O I
10.1063/1.322194
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5173 / 5178
页数:6
相关论文
共 28 条
  • [1] ASHEN DJ, 1974, S 3 5 COMPOUNDS DEAU
  • [2] BALLAND B, 1975, THESIS I NATIONAL SC
  • [3] PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS
    BOIS, D
    BOULOU, M
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 22 (02): : 671 - 675
  • [4] BOIS D, 1975, J APPL PHYS, V45, P3882
  • [5] Dean P. J., 1973, PROGR SOLID STATE CH, V8, P1
  • [6] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE
    DEAN, PJ
    FROSCH, CJ
    HENRY, CH
    [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &
  • [7] DMITRUK NL, 1973, SOV PHYS SEMICOND+, V7, P469
  • [8] DETERMINATION OF RELEVANT PARAMETERS OF DOPANTS ZN AND TE FROM C-T MEASUREMENTS IN GAP/ZN,O/P-N JUNCTIONS
    FERENCZI, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1480 - 1481
  • [9] PHOTOCAPACITANCE INVESTIGATION OF DEFECTS IN GAAS0.6P0.4
    FORBES, L
    FOGLE, RM
    [J]. APPLIED PHYSICS LETTERS, 1974, 25 (03) : 152 - 155
  • [10] GRIMMEISS HG, 1974, I PHYS C SER, V22, P187