MANGANESE BISMUTH AND OTHER MAGNETIC-MATERIALS FOR BEAM ADDRESSABLE MEMORIES

被引:16
作者
DEKKER, P [1 ]
机构
[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
关键词
D O I
10.1109/TMAG.1976.1059032
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:311 / 327
页数:17
相关论文
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