MOBILITY OF A VERY PURE SEMICONDUCTOR INCLUDING LOW IMPURITY CONCENTRATION LIMIT

被引：11

作者：

ZUBAREV, DN

BALABANYAN, GO

FUJITA, S

机构：

[1] VA STEKLOV MATH INST,MOSCOW,USSR

[2] SUNY BUFFALO,DEPT PHYS & ASTRON,AMHERST,NY 14260

来源：

关键词：

D O I：

10.1016/0038-1098(77)90033-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：565 / 566

页数：2

共 6 条

[1]

BROOKS H, 1951, PHYS REV, V83, P879

[2] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].

CONWELL, E ;

WEISSKOPF, VF .

PHYSICAL REVIEW, 1950, 77 (03) :388-390

[3] MOBILITY OF VERY PURE SEMICONDUCTORS AT VERY LOW-TEMPERATURES [J].

FUJITA, S ;

KO, CL ;

CHI, JY .

[4]

FUJITA S, 1969, INT J THEOR PHYS, V2, P59

KAWAMURA, H ;

SEKIDO, K ;

IMAI, I ;

SAJI, H ;

FUKAI, M .

[6]

MCCOMBEI BD, COMMUNICATION