MOBILITY OF VERY PURE SEMICONDUCTORS AT VERY LOW-TEMPERATURES

被引：14

作者：

FUJITA, S

KO, CL

CHI, JY

机构：

[1] UNIV AUTONOMA METROPOLITANA IZTAPALAPA, DEPT FIS & QUIM, MEXICO CITY 13, MEXICO

[2] SUNY Buffalo, DEPT PHYS & ASTRON, BUFFALO, NY 14214 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1976年 / 37卷 / 02期

关键词：

D O I：

10.1016/0022-3697(76)90166-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：227 / 233

页数：7

共 17 条

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