SURFACE DIFFERENTIAL REFLECTIVITY SPECTROSCOPY OF SEMICONDUCTOR SURFACES

被引:96
作者
SELCI, S [1 ]
CICCACCI, F [1 ]
CHIAROTTI, G [1 ]
CHIARADIA, P [1 ]
CRICENTI, A [1 ]
机构
[1] CNR,IST STRUTTURA MAT,I-00044 FRASCATI,ITALY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 03期
关键词
D O I
10.1116/1.574154
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:327 / 332
页数:6
相关论文
共 38 条
[1]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[2]   OPTICAL-PROPERTIES OF DANGLING-BOND STATES AT CLEAVED SILICON SURFACES [J].
ASSMANN, J ;
MONCH, W .
SURFACE SCIENCE, 1980, 99 (01) :34-44
[3]   PERTURBATIVE APPROACH TO THE CALCULATION OF THE ELECTRIC-FIELD NEAR A METAL-SURFACE [J].
BAGCHI, A ;
BARRERA, RG ;
RAJAGOPAL, AK .
PHYSICAL REVIEW B, 1979, 20 (12) :4824-4838
[4]  
BORN N, 1965, PRINCIPLES OPTICS
[5]  
CARDONA M, 1967, PHYS REV, V154, P96
[7]   SURFACE-STATES ON SI (111) 2 X 1 DETECTED BY EXTERNAL REFLECTIVITY [J].
CHIARADIA, P ;
CHIAROTTI, G ;
NANNARONE, S ;
SASSAROLI, P .
SOLID STATE COMMUNICATIONS, 1978, 26 (11) :813-815
[8]   OPTICAL-DETECTION OF SURFACE-STATES IN GAAS(110) AND GAP(110) [J].
CHIARADIA, P ;
CHIAROTTI, G ;
CICCACCI, F ;
MEMEO, R ;
NANNARONE, S ;
SASSAROLI, P ;
SELCI, S .
SURFACE SCIENCE, 1980, 99 (01) :70-75
[9]   DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE [J].
CHIARADIA, P ;
CRICENTI, A ;
SELCI, S ;
CHIAROTTI, G .
PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1145-1147
[10]   OPTICAL DETECTION OF SURFACE STATES ON CLEAVED (111) SURFACES OF GE [J].
CHIAROTTI, G ;
DELSIGNO.G ;
NANNARONE, S .
PHYSICAL REVIEW LETTERS, 1968, 21 (16) :1170-+