EFFECTS OF IMPURITY TRANSITIONS ON ELECTROREFLECTANCE IN THIN EPITAXIAL GAAS AND GA1-XALXAS/GAAS LAYERS

被引：27

作者：

GLEMBOCKI, OJ

BOTTKA, N

FURNEAUX, JE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：432 / 437

页数：6

共 31 条

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