SURFACE-ANALYSIS OF SEMICONDUCTORS WITH SIMS

被引:7
作者
GRASSERBAUER, M
STINGEDER, G
机构
关键词
D O I
10.1016/0165-9936(84)80012-6
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
收藏
页码:133 / 139
页数:7
相关论文
共 9 条
[1]  
ANTONIADIS DA, 1978, 50192 STANDF EL LAB
[2]  
BRODIE I, 1982, PHYSICS MICROFABRICA
[3]  
Chu W.K., 1978, BACK SCATTERING SPEC
[4]  
MCHUGH JA, 1975, NBS SP, V427
[5]  
MORRISON GH, 1982, SIMS, V3, P244
[6]  
Ryssel H., 1978, IONENIMPLANTATION
[7]   QUANTITATIVE DISTRIBUTION ANALYSIS OF DOPANT ELEMENTS IN SILICON WITH SIMS FOR THE IMPROVEMENT OF PROCESS MODELING [J].
STINGEDER, G ;
GRASSERBAUER, M ;
GUERRERO, E ;
POTZL, H ;
TIELERT, R .
FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1983, 314 (03) :304-308
[8]  
Werner H. W., 1976, Acta Electronica, V19, P53
[9]  
[No title captured]