QUANTITATIVE DISTRIBUTION ANALYSIS OF DOPANT ELEMENTS IN SILICON WITH SIMS FOR THE IMPROVEMENT OF PROCESS MODELING

被引：15

作者：

STINGEDER, G

GRASSERBAUER, M

GUERRERO, E

POTZL, H

TIELERT, R

机构：

[1] VIENNA TECH UNIV,INST ANALYT CHEM,A-1060 VIENNA,AUSTRIA

[2] VIENNA TECH UNIV,INST GEN ELECT ENGN & ELECTR,DEPT PHYS ELECTR,A-1040 VIENNA,AUSTRIA

[3] LUDWIG BOLTZMANN INST SOLID STATE PHYS,VIENNA,AUSTRIA

[4] SIEMENS AG,CENT RES LABS,MUNICH,FED REP GER

来源：

FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE | 1983年 / 314卷 / 03期

关键词：

D O I：

10.1007/BF00516826

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：304 / 308

页数：5

共 21 条

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