PATTERNED CRYSTAL-GROWTH OF GAAS USING LASER SCANNING WITH ATOMIC LAYER EPITAXY

被引：8

作者：

IWAI, S ^{[1
]}

MEGURO, T ^{[1
]}

AOYAGI, Y ^{[1
]}

MIYOSHI, T ^{[1
]}

机构：

[1] YAMAGUCHI UNIV,COLL TECH,UBE,YAMAGUCHI 755,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

VAPOR-PHASE EPITAXY;

D O I：

10.1016/0022-0248(91)90445-B

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Laser assisted atomic layer epitaxy in MOVPE (metalorganic vapor phase epitaxy) has been applied to selective area growth. Single crystalline GaAs was grown by scanning a laser beam using an Ar+ laser in the triethylgallium-AsH3 system. Patterned growth of uniform thickness was obtained in spite of scanning speed fluctuations and the intensity profile of laser beam.

引用

页码：136 / 140

页数：5