ANNEALING KINETICS DURING RAPID AND CLASSICAL THERMAL-PROCESSING OF A LASER-INDUCED DEFECT IN N-TYPE SILICON

被引：13

作者：

ADEKOYA, WO

MULLER, JC

SIFFERT, P

机构：

来源：

关键词：

D O I：

10.1063/1.97344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1429 / 1431

页数：3

共 16 条

[1]

[Anonymous], 1982, LASER ANNEALING SEMI

[2]

APPLETON BR, 1982, LASER ELECTRON BEAM

[3]

BIEGELSEN DK, 1984, MATERIALS RES SOC C, V35

[4]

HUNTLEY FA, 1975, LATTICE DEFECTS SEMI

KIMERLING, LC ;

DEANGELIS, HM ;

DIEBOLD, JW .

KIMERLING, LC ;

DEANGELIS, HM ;

CARNES, CP .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :427-+

KIMERLING, LC ;

CARNES, CP .

[8]

KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[9]

MAHAJAN S, 1982, MATERIALS RES SOC C, V14

[10]

MESLI A, 1983, EUROPEAN MATERIALS C, V5, P281