ON-WAFER MICROWAVE MEASUREMENT SETUP FOR INVESTIGATIONS ON HEMTS AND HIGH-TC SUPERCONDUCTORS AT CRYOGENIC TEMPERATURES DOWN TO 20-K

被引：15

作者：

MESCHEDE, H ^{[1
]}

REUTER, R ^{[1
]}

ALBERS, J ^{[1
]}

KRAUS, J ^{[1
]}

PETERS, D ^{[1
]}

BROCKERHOFF, W ^{[1
]}

TEGUDE, FJ ^{[1
]}

BODE, M ^{[1
]}

SCHUBERT, J ^{[1
]}

ZANDER, W ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST SCHICHT & IONENTECH, W-5170 JULICH 1, GERMANY

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1992年 / 40卷 / 12期

关键词：

D O I：

10.1109/22.179897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper an on-wafer measurement setup for the microwave characterization of HEMT's and high T(C) superconductors at temperatures down to 20 K is presented. Both S-parameter and noise measurements, can be performed in the frequency range from 45 MHz to 40 GHz and 2 GHz to 18 GHz, respectively, using standard calibration techniques and commercial microwave probe tips. Microwave measurements on a pseudomorphic FET and an AlGaAs/GaAs HEMT as well as investigations on a superconducting filter are presented to demonstrate the efficiency of the developed system.

引用

页码：2325 / 2331

页数：7

共 14 条

[1] RF MEASUREMENTS AND CHARACTERIZATION OF HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS AT LOW-TEMPERATURES [J].

BROCKERHOFF, W ;

MESCHEDE, H ;

PROST, W ;

HEIME, K ;

WEIMANN, G ;

SCHLAPP, W .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (09) :1380-1388

[2] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].

DAMBRINE, G ;

CAPPY, A ;

HELIODORE, F ;

PLAYEZ, E .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) :1151-1159

[3] A NEW RELATIONSHIP BETWEEN THE FUKUI COEFFICIENT AND OPTIMAL CURRENT VALUE FOR LOW-NOISE OPERATION OF FIELD-EFFECT TRANSISTORS [J].

DELAGEBEAUDEUF, D ;

CHEVRIER, J ;

LAVIRON, M ;

DELESCLUSE, P .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :444-445

[4] MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS [J].

DRUMMOND, TJ ;

MASSELINK, WT ;

MORKOC, H .

PROCEEDINGS OF THE IEEE, 1986, 74 (06) :773-822

[5]

DRUMMOND TJ, 1983, IEEE T ELECTRON DEV, V30, P414

[6] ON THE LOW-TEMPERATURE DEGRADATION OF (ALGA)AS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KASTALSKY, A ;

KIEHL, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) :414-423

[7]

KONOPKA J, 1992, IEEE MTT S S DIGEST, P1027

[8]

LASKAR J, 1990, IEEE ELECTR DEVICE L, V9, P300

[9]

MESCHEDE H, 1990, P EUROP SOLID STATE, P105

[10] TEMPERATURE-DEPENDENCE OF HIGH-FREQUENCY PERFORMANCE OF ALGAAS/INGAAS PSEUDOMORPHIC HEMTS [J].

MIZUTANI, T ;

MAEZAWA, K .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (01) :8-10

← 1 2 →