RAMAN-SCATTERING CHARACTERIZATION OF GA1-XALXAS/GAAS HETEROJUNCTIONS - EPILAYER AND INTERFACE

被引：17

作者：

PARAYANTHAL, P ^{[1
]}

POLLAK, FH ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 10期

关键词：

D O I：

10.1063/1.93356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：961 / 963

页数：3

共 13 条

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[3] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J].

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USHIODA, S .

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[4]

HOVEL HJ, 1975, SOLAR CELLS SEMICOND, V2

[5] RAMAN INVESTIGATION OF ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN GA1-XALXAS EPITAXIAL LAYERS [J].

JUSSERAND, B ;

SAPRIEL, J .

PHYSICAL REVIEW B, 1981, 24 (12) :7194-7205

[6] RECTIFICATION IN ALXGA1-XAS-GAAS N-N HETEROJUNCTION DEVICES [J].

LEE, SC ;

PEARSON, GL .

SOLID-STATE ELECTRONICS, 1981, 24 (06) :563-568

[7]

MAUSI H, 12TH P INT C PHYS SE, P509

[8]

Milnes AG, 1972, HETEROJUNCTIONS META

[9]

PEARSON GL, 1973, Q PROGR REPORT PERIO

[10] NON-DESTRUCTIVE CHARACTERIZATION OF GA1-XALXAS-GAAS INTERFACES USING NUCLEAR PROFILING [J].

ROSNER, JS ;

LESSER, PMS ;

POLLAK, FH ;

WOODALL, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :584-588

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