NON-DESTRUCTIVE CHARACTERIZATION OF GA1-XALXAS-GAAS INTERFACES USING NUCLEAR PROFILING

被引：6

作者：

ROSNER, JS ^{[1
]}

LESSER, PMS ^{[1
]}

POLLAK, FH ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：584 / 588

页数：5

共 15 条

[1] ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS [J].

BEROLO, O ;

WOOLLEY, JC .

CANADIAN JOURNAL OF PHYSICS, 1971, 49 (10) :1335-&

[2] CALCULATION OF ENERGY STRAGGLING FOR PROTONS AND HELIUM IONS [J].

CHU, WK .

PHYSICAL REVIEW A, 1976, 13 (06) :2057-2060

[3] COMPARISON OF BACKSCATTERING SPECTROMETRY AND SECONDARY ION MASS-SPECTROMETRY BY ANALYSIS OF TANTALUM PENTOXIDE LAYERS [J].

CHU, WK ;

NICOLET, MA ;

MAYER, JW ;

EVANS, CA .

ANALYTICAL CHEMISTRY, 1974, 46 (14) :2136-2141

[4]

CHU WK, 1977, ION BEAM HDB MATERIA, P2

[5] INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONS [J].

GARNER, CM ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1521-1524

[6] PREFERRED SPUTTERING ON BINARY ALLOY SURFACES OF THE AL-PD-SISYSTEM [J].

HO, PS ;

LEWIS, JE ;

CHU, WK .

SURFACE SCIENCE, 1979, 85 (01) :19-28

[7]

Hovel H.J., 1975, SEMICONDUCTORS SEMIM, P8

[8] ISOTHERMAL LPE GROWTH OF THIN GRADED BAND-GAP ALXGA1-X AS LAYERS [J].

KORDOS, P ;

PEARSON, GL ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6902-6906

[9]

MILNES AG, 1972, HETERJUNCTIONS METAL

[10]

Northcliffe L. S., 1970, NUCL DATA A, V7, P233

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