RESONANT LEVEL IN SEMICONDUCTING HG1-XCDXTE

被引：17

作者：

DORNHAUS, R

NIMTZ, G

SCHLABITZ, W

BURKHARD, H

机构：

[1] UNIV COLOGNE,PHYS INST 2,ZULPICHER STR 77,D-5 COLOGNE,FED REP GER

[2] RHEIN WESTFAL TH AACHEN,PHYS INST 1,AACHEN,FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 17卷 / 07期

关键词：

D O I：

10.1016/0038-1098(75)90733-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：837 / 841

页数：5

共 21 条

[1]

AMIRKHAN.KI, 1967, FIZ TVERD TELA+, V8, P1739

[2] EFFECTIVE MASS AND SPIN SPLITTING IN HG1-XCDXTE [J].

ANTCLIFFE, GA .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (02) :345-+

[3]

BAUER G, COMMUNICATION

[4]

BETHE H, 1956, ELEMENTARY NUCLEAR P

[5]

BLATTE M, 1971, OPT COMMUN, V4, P178

[6]

BLIEK LM, 1967, THESIS TU BRAUNSCHWE

[7]

BURKHARD H, TO BE PUBLISHED

[8] GALVANOMAGNETIC PROPERTIES OF N-TYPE HG0.8CD0.2TE [J].

DORNHAUS, R ;

NIMTZ, G ;

SCHLABITZ, W ;

ZAPLINSKI, P .

SOLID STATE COMMUNICATIONS, 1974, 15 (03) :495-498

[9]

DORNHAUS R, 1974, 12TH P INT C PHYS SE, P1157

[10]

FINCK C, 1972, 11TH P INT C PHYS SE, P944

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