THE ROLE OF MOVPE IN THE MANUFACTURE OF HIGH-PERFORMANCE INP BASED OPTOELECTRONIC DEVICES

被引：36

作者：

NELSON, AW

SPURDENS, PC

COLE, S

WALLING, RH

MOSS, RH

WONG, S

HARDING, MJ

COOPER, DM

DEVLIN, WJ

ROBERTSON, MJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90621-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：792 / 802

页数：11

共 20 条

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[8] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

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[9]

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[10]

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