DESIGN OF EPITAXIAL ALGAAS MULTILAYER STRUCTURES - INTERFERENCE FILTERS AND OPTICALLY CONTROLLABLE REFLECTION MODULATORS

被引：9

作者：

FOUCKHARDT, H

WALTHER, M

HACKBARTH, T

EBELING, KJ

机构：

[1] The authors are in the Institut für Hochfrequenztechnik, Technische Universität Braunschweig, D-3300 Braunschweig

来源：

OPTICS AND LASER TECHNOLOGY | 1990年 / 22卷 / 01期

关键词：

integrated optics; interference filters; optival switching; reflection modulators; semiconductor devices; signal processing;

D O I：

10.1016/0030-3992(90)90008-R

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Dielectric interference filters incorporating an epitaxial anti-reflector structure and a concept for an all-optical reflection modulator are introduced. They are suitable for two-dimensional digital optical signal processing in an AlGaAs system employing molecular beam epitaxy. The reflection modulator concept uses dynamic band filling in multiquantum wells to obtain a bleachable absorption type optical non-linearity and promises more than 80% modulation depth. The numerical investigations are carried through with the help of two equivalent mathematical approaches which are explained in detail. Calculated results show satisfying agreement with experiments. © 1990.

引用

页码：23 / 30

页数：8

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