QUANTUM-TAILORED SOLID-STATE DEVICES

被引：1

作者：

DRUMMOND, TJ

GOURLEY, PL

ZIPPERIAN, TE

机构：

[1] SANDIA NATL LABS,DIV SEMICOND PHYS,ALBUQUERQUE,NM 87185

[2] SANDIA NATL LABS,DIV DEVICE RES,ALBUQUERQUE,NM 87185

来源：

IEEE SPECTRUM | 1988年 / 25卷 / 06期

关键词：

CRYSTALS - Strain - OPTICAL DEVICES - SEMICONDUCTOR DEVICES - Heterojunctions - SEMICONDUCTOR MATERIALS - Growth;

D O I：

10.1109/6.4562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Techniques that allow semiconductor crystals to be grown on one layer at a time are described, and the potential they offer for tailoring device characteristics precisely by controlling the band gap is discussed. Three tools used to accomplish this are examined: alloying, which changes a semiconductor's chemical composition; the juxtaposition of heterogeneous materials to form heterojunctions; and the introduction of mechanical strain between crystal layers. Band-gap engineering of optical devices is given particular attention.

引用

页码：33 / 37

页数：5

共 4 条

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