OPTICALLY INDUCED ABSORPTION MODULATION IN GAAS DOPING SUPERLATTICES

被引：34

作者：

SIMPSON, TB ^{[1
]}

PENNISE, CA ^{[1
]}

GORDON, BE ^{[1
]}

ANTHONY, JE ^{[1
]}

AUCOIN, TR ^{[1
]}

机构：

[1] ELECTR TECHNOL & DEV LAB,FT MONMOUTH,NJ 07703

来源：

关键词：

D O I：

10.1063/1.97050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：590 / 592

页数：3

共 10 条

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[2] OBSERVATION OF TUNABLE BAND-GAP AND TWO-DIMENSIONAL SUBBANDS IN A NOVEL GAAS SUPER-LATTICE
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[3] DOPING SUPER-LATTICES
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[4] THEORY OF ABSORPTION IN DOPING SUPERLATTICES
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[5] N-I-P-I DOPING SUPER-LATTICES - METASTABLE SEMICONDUCTORS WITH TUNABLE PROPERTIES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 278 - 284
[6] TUNABILITY OF BIPOLAR CONDUCTIVITY IN GAAS DOPING SUPERLATTICES
KUNZEL, H
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PLOOG, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 1 - 9
[7] STUDY OF TIME-RESOLVED LUMINESCENCE IN GAAS DOPING SUPER-LATTICES
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PLOOG, K
[J]. PHYSICAL REVIEW B, 1983, 28 (10) : 5937 - 5942
[8] ELECTRONIC-STRUCTURE OF SEMICONDUCTORS WITH DOPING SUPER-LATTICES
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DOHLER, GH
[J]. PHYSICAL REVIEW B, 1983, 27 (06): : 3538 - 3546
[9] SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P499
[10] SIMPSON TJ, UNPUB