EXCESS NOISE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ASSOCIATED TLM TEST STRUCTURES

被引：19

作者：

DELSENY, C ^{[1
]}

PASCAL, F ^{[1
]}

JARRIX, S ^{[1
]}

LECOY, G ^{[1
]}

DANGLA, J ^{[1
]}

DUBONCHEVALLIER, C ^{[1
]}

机构：

[1] FRANCE TELECOM, CNET,BAGNEUX LAB,III IV MICROELECTR DIV, DEPT MICROWAVE & HBT HIGH SPEED CIRCUITS, F-92220 BAGNEUX, FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 11期

关键词：

D O I：

10.1109/16.333817

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Noise measurements both on transmission line model (TLM) test structures and on associated HBT's are presented. Contact noise is proved to be negligible in the TLM's related to the base structure of transistors. A Hooge parameter for p++-doped GaAs is extracted. Activation energies are calculated from results versus temperature. Considering the TLM related to the structure of the emitter, it is shown that the g-r levels observed originate from the AlGaAs layer. Noise measurements on HBT's also exhibit excess noise. A value of the cutoff frequency between the equivalent input current white noise and the 1/f component is given. The base current dependencies associated with different measurement configurations suggest the 1/f noise to come from the base or the emitter-base junction. The g-r components are studied as a function of temperature. Activation energies are deduced. Finally a comparison of the TLM and HBT noise results is presented. The presence of the complex DX center and of g-r levels in the base region are proposed as possible origins for the g-r noise in HBT's.

引用

页码：2000 / 2005

页数：6

共 22 条

[1]

ASBECK P, 1983, IEEE T ELECTRON DEV, V36, P2032

[2] LOW-FREQUENCY NOISE PROPERTIES OF N-P-N ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].