EXPERIMENTAL STUDIES OF 1/F NOISE IN N-GAAS

被引：22

作者：

HOOGE, FN ^{[1
]}

TACANO, M ^{[1
]}

机构：

[1] KYOCERA CO,KYOTO,KYOTO 605,JAPAN

来源：

PHYSICA B | 1993年 / 190卷 / 2-3期

关键词：

D O I：

10.1016/0921-4526(93)90459-J

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The literature on 1/f noise in n-type GaAs is reviewed. Reported values of alpha(meas) are converted into alpha(latt) values. At 300 K alpha(latt) = 10(-4) ; at 77 K alpha(latt) = 10(-5). These values do not agree with theoretical predictions.

引用

页码：145 / 149

页数：5

共 20 条

[1]

GUK EG, 1990, SOV PHYS SEMICOND+, V24, P513

[2] 1-F NOISE - INFRARED PHENOMENON [J].

HANDEL, PH .

PHYSICAL REVIEW LETTERS, 1975, 34 (24) :1492-1495

[3]

HANDEL PH, 1983, NOISE PHYSICAL SYSTE, P97

[4] LATTICE SCATTERING CAUSES 1-F NOISE [J].

HOOGE, FN ;

VANDAMME, LKJ .

PHYSICS LETTERS A, 1978, 66 (04) :315-316

[5] EXPERIMENTAL STUDIES ON 1-F NOISE [J].

HOOGE, FN ;

KLEINPENNING, TGM ;

VANDAMME, LKJ .

REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532

[6]

LEVINSHTEIN ME, 1990, SOV PHYS SEMICOND+, V24, P1125

[7]

LEVINSHTEIN ME, 1988, SOV PHYS SEMICOND, V22, P661

[8]

LEVINSHTEIN ME, 1983, SOV PHYS SEMICOND, V217, P1167

[9] 1/F NOISE AT ROOM-TEMPERATURE IN N-TYPE GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

REN, L ;

LEYS, MR .

PHYSICA B, 1991, 172 (03) :319-323

[10] TEMPERATURE-DEPENDENCE OF 1/F NOISE IN EPITAXIAL N-TYPE GAAS [J].

REN, L ;

HOOGE, FN .

PHYSICA B, 1992, 176 (03) :209-212

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