TEMPERATURE-DEPENDENCE OF 1/F NOISE IN EPITAXIAL N-TYPE GAAS

被引：22

作者：

REN, L

HOOGE, FN

机构：

[1] Department of Electrical Engineering, Eindhoven University of Technology, Eindhoven

来源：

PHYSICA B | 1992年 / 176卷 / 03期

关键词：

D O I：

10.1016/0921-4526(92)90005-D

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The 1/f noise of n-type epitaxial GaAs was measured between 77 and 300 K. The 1/f noise turns out to be a fluctuation in the lattice scattering. At low temperatures alpha(latt) is-approximately-equal-to 7 x 10(-5). At high temperatures the noise generation is thermally activated with an activation energy of about 0.13 eV.

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页码：209 / 212

页数：4

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