TEMPERATURE-DEPENDENCE OF 1/F NOISE IN SILICON

被引：10

作者：

LUO, J ^{[1
]}

LOVE, WF ^{[1
]}

MILLER, SC ^{[1
]}

机构：

[1] UNIV COLORADO,DEPT PHYS,BOULDER,CO 80309

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3196 / 3198

页数：3

共 12 条

[1] EXPERIMENTAL TEMPERATURE-DEPENDENCE OF 1/F FLUCTUATIONS IN GERMANIUM AND SILICON [J].

BISSCHOP, J ;

CUIJPERS, JL .

PHYSICA B & C, 1983, 123 (01) :6-10

[2] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J].

CARD, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :538-544

[3] LOW-FREQUENCY FLUCTUATIONS IN SOLIDS - 1-F NOISE [J].

DUTTA, P ;

HORN, PM .

REVIEWS OF MODERN PHYSICS, 1981, 53 (03) :497-516

[4] LATTICE SCATTERING CAUSES 1-F NOISE [J].

HOOGE, FN ;

VANDAMME, LKJ .

PHYSICS LETTERS A, 1978, 66 (04) :315-316

[5] EXPERIMENTAL STUDIES ON 1-F NOISE [J].

HOOGE, FN ;

KLEINPENNING, TGM ;

VANDAMME, LKJ .

REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532

[6] 1/F NOISE IS NO SURFACE EFFECT [J].

HOOGE, FN .

PHYSICS LETTERS A, 1969, A 29 (03) :139-&

[7] EFFECT OF PROBE SIZE ON ELECTRICAL NOISE DUE TO CONDUCTIVITY FLUCTUATIONS [J].

MILLER, SC .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (11) :4022-4026

[8] ORIGIN OF 1/F NOISE [J].

PALENSKIS, V ;

SHOBLITSKAS, Z .

SOLID STATE COMMUNICATIONS, 1982, 43 (10) :761-763

[9]

Van Der Ziel A., 1979, Advances in electronics and electron physics, vol.49, P225, DOI 10.1016/S0065-2539(08)60768-4

[10] MAGNETIC EFFECTS ON 1-F NOISE IN N-INSB [J].

VANDEVOORDE, P ;

LOVE, WF .

PHYSICAL REVIEW B, 1981, 24 (08) :4781-4786

← 1 2 →