1/F NOISE AT ROOM-TEMPERATURE IN N-TYPE GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：28

作者：

REN, L ^{[1
]}

LEYS, MR ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT PHYS,5600 MB EINDHOVEN,NETHERLANDS

来源：

PHYSICA B | 1991年 / 172卷 / 03期

关键词：

D O I：

10.1016/0921-4526(91)90449-O

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The 1/f noise in n-GaAs epitaxial layers grown by molecular beam epitaxy was investigated at room temperature for various doping concentrations. The measured 1/f noise is a bulk effect. The noise parameter alpha between 10(-4) and 10(-3) was found to be dependent on the doping concentration.

引用

页码：319 / 323

页数：5

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