Photoreflectance measurements on ZnSe/ZnS0.25Se0.75 SQW

被引：3

作者：

Lankes, S

Hahn, B

Meier, C

Hierl, F

Kastner, M

Rosenauer, A

Gebhardt, W

机构：

[1] Inst fuer Festkoerperphysik der, Universitaet Regensburg, Regensburg

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1995年 / 152卷 / 01期

关键词：

D O I：

10.1002/pssa.2211520113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A series of ZnSe/ZnS0.25Se0.75 single quantum wells (SQW) of various well thicknesses are grown on (001) GaAs with low pressure metalorganic vapour phase epitaxy (MOVPE). Photoreflectance measurements (PR) show pronounced structures which are assigned to excitonic transitions between quantum well states. The structural properties of the samples are determined with high resolution X-ray diffraction and transmission electron microscopy. The model of Mathieu et al. is used to calculate excitonic states in a QW and a fitting procedure is developed which allows an estimate of the band offset. The structure exhibits a type TT alignment which is also supported by photoluminescence (PL) measurements and which is mainly the result of a strain induced shift of the ZnS0.25Se0.75 conduction band.

引用

页码：123 / 131

页数：9

共 22 条

[11] SIMPLE ANALYTICAL METHOD FOR CALCULATING EXCITON BINDING-ENERGIES IN SEMICONDUCTOR QUANTUM-WELLS [J].