FEATURES OF THE H2SIO POTENTIAL-ENERGY SURFACE - STABILIZATION OF A SILICON OXYGEN DOUBLE-BOND

被引：21

作者：

KUDO, T ^{[1
]}

NAGASE, S ^{[1
]}

机构：

[1] YOKOHAMA NATL UNIV, FAC EDUC, DEPT CHEM, YOKOHAMA, KANAGAWA 240, JAPAN

来源：

JOURNAL OF ORGANOMETALLIC CHEMISTRY | 1983年 / 253卷 / 03期

关键词：

D O I：

10.1016/S0022-328X(00)99237-4

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

引用

页码：C23 / C26

页数：4

共 23 条

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